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July 2001
AO6800 Dual N-Channel Enhancement Mode Field Effect Transistor
General Description
The AO6800 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications.
Features
VDS (V) = 30V ID = 3.4 A RDS(ON) < 60m (VGS = 10V) RDS(ON) < 75m (VGS = 4.5V) RDS(ON) < 115m (VGS = 2.5V)
TSOP6 Top View G1 S2 G2 16 25 34 D1 S1 D2
D1
D2
G1 S1
G2 S2
Absolute Maximum Ratings TA=25C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current Power Dissipation A
B
Maximum 30 12 3.4 2.7 20 1.15 0.73 -55 to 150
Units V V A
TA=25C TA=70C TA=25C TA=70C ID IDM PD TJ, TSTG
W C
Junction and Storage Temperature Range Thermal Characteristics each FET Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C
Symbol t 10s Steady-State Steady-State RJA RJL
Typ 78 106 64
Max 110 150 80
Units C/W C/W C/W
Alpha & Omega Semiconductor, Ltd.
AO6800
Electrical Characteristics (TJ=25C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) RDS(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current Conditions ID=250A, VGS=0V VDS=24V, VGS=0V TJ=55C VDS=0V, VGS=12V VDS=VGS ID=250A VGS=4.5V, VDS=5V VGS=10V, ID=3.4A Static Drain-Source On-Resistance TJ=125C VGS=4.5V, ID=3A VGS=2.5V, ID=2A VDS=5V, ID=3A 0.6 20 50 66 60 88 7.8 0.8 60 80 75 115 1 1.5 1 Min 30 1 5 100 1.4 Typ Max Units V A nA V A m m m S V A pF pF pF nC nC nC ns ns ns ns ns nC
gFS VSD IS
Forward Transconductance Diode Forward Voltage IS=1A,VGS=0V Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz
390 54.5 41 3 4.96 0.8 1.72 6.8 3.6 35.2 13.7 11.4 6
SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) tr tD(off) tf trr Qrr Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time
VGS=4.5V, VDS=15V, ID=3.4A
VGS=10V, VDS=15V, RL=4.7, RGEN=6
IF=3.4A, dI/dt=100A/s Body Diode Reverse Recovery Charge IF=3.4A, dI/dt=100A/s
A: The value of R JA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25C. The value in any a given application depends on the user's specific board design. The current rating is based on the t 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R JA is the sum of the thermal impedence from junction to lead RJL and lead to ambient. D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 s pulses, duty cycle 0.5% max. 2 E. These tests are performed with the device mounted on 1 in FR-4 board with 2oz. Copper, in a still air environment with TA=25C. The SOA curve provides a single pulse rating.
Alpha & Omega Semiconductor, Ltd.
AO6800 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
15 12 4.5V 9 ID (A) 2.5V 6 3 0 0 1 2 3 4 5 VDS (Volts) Fig 1: On-Region Characteristics 150 Normalized On-Resistance 125 VGS=2.5V RDS(ON) (m) 100 75 50 VGS=10V 25 0 0 2 4 6 8 10 0.8 0 25 50 75 100 125 150 175 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage VGS=4.5V 1.8 ID(A) 6 10 10V 3V 8 VDS=5V 25C 125C
4
VGS=2V
2
0 0 0.5 1 1.5 2 2.5 3 3.5 VGS(Volts) Figure 2: Transfer Characteristics
1.6
VGS=4.5V VGS=10V
1.4
1.2
VGS=2.5V
1
200
1.0E+01 1.0E+00
150 RDS(ON) (m)
ID=2A 1.0E-01 IS (A) 125C 1.0E-02 1.0E-03
100
125C
50
25C
25C 1.0E-04 1.0E-05
0 0 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage
0.0
0.2
0.4
0.6
0.8
1.0
1.2
VSD (Volts) Figure 6: Body-Diode Characteristics
Alpha and Omega Semiconductor, Ltd.
AO6800 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
5 4 VGS (Volts) 3 2 1 0 0 1 2 3 4 5 6 Qg (nC) Figure 7: Gate-Charge Characteristics VDS=15V ID=3.4A Capacitance (pF) 600 500 Ciss 400 300 200 100 0 0 5 10 15 20 25 30 VDS (Volts) Figure 8: Capacitance Characteristics Coss Crss
100.0
TJ(Max)=150C TA=25C RDS(ON) limited 10s 100s 1ms 0.1s 10ms 1s 10s DC Power (W)
20 TJ(Max)=150C TA=25C 15
10.0 ID (Amps)
10
1.0
5
0.1 0.1 1 VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 100
0 0.001
0.01
0.1
1
10
100
1000
Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E)
10 Z JA Normalized Transient Thermal Resistance
D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=110C/W
In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
0.1
PD Ton Single Pulse
T
0.01 0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance
Alpha & Omega Semiconductor, Ltd.
ALPHA & OMEGA
SEMICONDUCTOR, INC.
TSOP-6 Package Data
SYMBOLS
DIMENSIONS IN MILLIMETERS
A A1 A2 b c D E E1 e e1 L 1
MIN 1.00 0.00 1.00 0.35 0.10 2.70 2.60 1.60
0.37 1
NOM --- --- 1.10 0.40 0.13 2.90 2.80 1.80 0.95 BSC 1.90 BSC --- 5
MAX 1.25 0.10 1.15 0.50 0.20 3.10 3.00 2.00 --- 8
PACKAGE MARKING DESCRIPTION
SEATING PLANE
NOTE: 1. LEAD FINISH: 150 MICROINCHES ( 3.8 um) MIN. THICKNESS OF Tin/Lead (SOLDER) PLATED ON LEAD 2. TOLERANCE 0.100 mm (4 mil) UNLESS OTHERWISE SPECIFIED 3. COPLANARITY : 0.1000 mm 4. DIMENSION L IS MEASURED IN GAGE PLANE
GAUGE PLANE
RECOMMENDED LAND PATTERN
TSOP-6 PART NO. CODE
PART NO. AO6800
CODE H0
NOTE: P N - PART NUMBER CODE. D - YAER AND WEEK CODE. L N - ASSEMBLY LOT CODE, FAB AND ASSEMBLY LOCATION CODE.
ALPHA & OMEGA
SEMICONDUCTOR, INC.
TSOP-6 Carrier Tape
TSOP-6 Tape and Reel Data
TSOP-6 Reel
TSOP-6 Tape
Leader / Trailer & Orientation

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